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Impurity with Intrinsic Concentration Calculator

Intrinsic Concentration Formula:

\[ n_i = \sqrt{\frac{n_e \times p}{T_0}} \]

1/m³
1/m³
K

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1. What is Intrinsic Concentration?

Definition: Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Purpose: It helps in understanding the fundamental electrical properties of semiconductor materials.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ n_i = \sqrt{\frac{n_e \times p}{T_0}} \]

Where:

Explanation: The intrinsic concentration is calculated by taking the square root of the product of electron and hole concentrations divided by the temperature impurity.

3. Importance of Intrinsic Concentration

Details: Knowing the intrinsic concentration is crucial for semiconductor device design and understanding material properties at different temperatures.

4. Using the Calculator

Tips: Enter the electron concentration, hole concentration (both in 1/m³), and temperature impurity (in Kelvin). All values must be > 0.

5. Frequently Asked Questions (FAQ)

Q1: What affects electron and hole concentrations?
A: They are influenced by temperature, impurities or dopants, and external electric or magnetic fields.

Q2: What is temperature impurity?
A: It represents the average air temperature over different timescales and affects semiconductor properties.

Q3: Why do we take the square root in the formula?
A: The square root accounts for the relationship between electron and hole concentrations in intrinsic semiconductors.

Q4: What are typical values for intrinsic concentration?
A: For silicon at room temperature, it's about 1.5×10¹⁰ cm⁻³, but varies with material and temperature.

Q5: How does temperature affect intrinsic concentration?
A: Higher temperatures generally increase intrinsic concentration as more electron-hole pairs are generated.

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