Current In Inversion Channel Of PMOS Calculator

Formula Used:

\[ I_d = W \times Q_p \times V_y \]

Width of Junction (W):

Inversion Layer Charge (Qp):

C/m²

Drift Velocity of Inversion (Vy):

m/s

Drain Current (Id):

Unit Converter ▲

Unit Converter ▼

From:	To:

1. What is the Current in Inversion Channel of PMOS?

The drain current in the inversion channel of a PMOS (P-type Metal-Oxide-Semiconductor) transistor represents the electric current flowing from the drain to the source when the device is in operation. This current is fundamental to the functioning of MOSFET-based circuits and systems.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ I_d = W \times Q_p \times V_y \]

Where:

\( I_d \) — Drain Current (A)
\( W \) — Width of Junction (m)
\( Q_p \) — Inversion Layer Charge (C/m²)
\( V_y \) — Drift Velocity of Inversion (m/s)

Explanation: The formula calculates the drain current by multiplying the width of the junction, the inversion layer charge per unit area, and the drift velocity of the inversion layer carriers.

3. Importance of Drain Current Calculation

Details: Accurate drain current calculation is crucial for designing and analyzing MOSFET circuits, predicting device performance, and ensuring proper operation of electronic systems.

4. Using the Calculator

Tips: Enter the width of junction in meters, inversion layer charge in coulombs per square meter, and drift velocity in meters per second. All values must be positive numbers.

5. Frequently Asked Questions (FAQ)

Q1: What is the inversion layer in a PMOS?
A: The inversion layer is a thin layer of mobile holes that forms at the semiconductor-oxide interface when a sufficient negative voltage is applied to the gate, creating a conductive channel.

Q2: How does width affect drain current?
A: Wider junctions allow more current to flow, as they provide a larger cross-sectional area for charge carriers to move through the channel.

Q3: What factors influence drift velocity?
A: Drift velocity depends on the electric field strength, carrier mobility, and temperature. Higher electric fields generally increase drift velocity up to saturation limits.

Q4: When is this formula applicable?
A: This simplified formula is typically used for basic calculations in the linear region of MOSFET operation, where the inversion layer is well-formed and uniform.

Q5: Are there limitations to this calculation?
A: Yes, this simplified model doesn't account for short-channel effects, velocity saturation, or other advanced physical phenomena that affect modern MOSFETs.