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The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field. This parameter is crucial for understanding the current flow in PMOS transistors.
The calculator uses the formula:
Where:
Explanation: The drift velocity is directly proportional to both the mobility of holes and the electric field strength in the channel.
Details: Accurate calculation of drift velocity is essential for predicting MOSFET performance, designing integrated circuits, and optimizing transistor operation in various electronic applications.
Tips: Enter the mobility of holes in m²/V·s and the horizontal component of electric field in V/m. Both values must be positive numbers for valid calculation.
Q1: What factors affect hole mobility in the channel?
A: Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, and the strength of the electric field.
Q2: How does electric field affect drift velocity?
A: The drift velocity increases linearly with the electric field strength, as described by the formula V_y = μ_p × E_y.
Q3: What are typical values for hole mobility in silicon?
A: For silicon, hole mobility typically ranges from 0.01 to 0.05 m²/V·s at room temperature, depending on doping concentration and other factors.
Q4: Why is this calculation specific to PMOS transistors?
A: This calculation uses hole mobility (μ_p) which is relevant for PMOS transistors where the majority carriers are holes, unlike NMOS transistors where electron mobility would be used.
Q5: What are the limitations of this simple model?
A: This model assumes constant mobility and doesn't account for velocity saturation effects that occur at high electric fields or other non-ideal behaviors in modern semiconductor devices.