Drain Current From Source To Drain Calculator

Formula Used:

\[ I_d = W \times Q_p \times \mu_p \times E_y \]

Width of Junction (W):

Inversion Layer Charge (Qp):

C/m²

Mobility of Holes in Channel (μp):

m²/V·s

Horizontal Component of Electric Field (Ey):

V/m

Drain Current (Id):

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1. What is Drain Current?

Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a fundamental parameter in semiconductor device operation and circuit design.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ I_d = W \times Q_p \times \mu_p \times E_y \]

Where:

\( I_d \) — Drain Current (A)
\( W \) — Width of Junction (m)
\( Q_p \) — Inversion Layer Charge (C/m²)
\( \mu_p \) — Mobility of Holes in Channel (m²/V·s)
\( E_y \) — Horizontal Component of Electric Field in Channel (V/m)

Explanation: This formula calculates the drain current based on the physical parameters of the semiconductor device, including junction width, charge density, carrier mobility, and electric field strength.

3. Importance of Drain Current Calculation

Details: Accurate drain current calculation is crucial for designing and analyzing semiconductor devices, optimizing circuit performance, and ensuring proper operation of electronic systems.

4. Using the Calculator

Tips: Enter all parameters in their respective SI units. Ensure all values are positive and within reasonable physical limits for accurate results.

5. Frequently Asked Questions (FAQ)

Q1: What factors affect drain current in MOSFETs?
A: Drain current is influenced by gate voltage, drain voltage, channel dimensions, carrier mobility, temperature, and semiconductor material properties.

Q2: How does inversion layer charge affect drain current?
A: Higher inversion layer charge density increases the number of charge carriers available for conduction, resulting in higher drain current.

Q3: What is the significance of hole mobility in channel?
A: Hole mobility determines how quickly holes can move through the channel under an electric field, directly affecting the current carrying capacity.

Q4: How does electric field influence drain current?
A: The horizontal electric field component drives the movement of charge carriers from source to drain, with stronger fields generally producing higher currents.

Q5: Are there limitations to this calculation method?
A: This simplified model may not account for all second-order effects such as velocity saturation, short-channel effects, or temperature variations in complex semiconductor devices.