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The Breakdown Voltage of Forward Biased of IGBT (Insulated Gate Bipolar Transistor) is the maximum voltage that can be applied across the device in forward bias condition without causing it to fail or break down. This parameter is crucial for ensuring the safe operation and reliability of IGBT devices in power electronics applications.
The calculator uses the following formula:
Where:
Explanation: The formula calculates the breakdown voltage based on the net positive charge in the IGBT device, with the relationship being inversely proportional to the 3/4 power of the net positive charge.
Details: Accurate breakdown voltage estimation is essential for designing reliable power electronic systems, preventing device failure, and ensuring operational safety in high-voltage applications.
Tips: Enter the net positive charge (IGBT) value in Coulombs. The value must be positive and greater than zero for accurate calculation.
Q1: What factors affect the breakdown voltage of IGBT?
A: The breakdown voltage is primarily determined by the net positive charge in the device, material properties, and device structure.
Q2: Why is the 3/4 power used in the formula?
A: The 3/4 power relationship comes from the physical modeling of breakdown phenomena in semiconductor devices and has been empirically validated.
Q3: What is the typical range of breakdown voltages for IGBTs?
A: IGBT breakdown voltages typically range from a few hundred volts to several thousand volts, depending on the device design and application.
Q4: How does temperature affect breakdown voltage?
A: Generally, breakdown voltage decreases with increasing temperature due to increased carrier generation and reduced critical electric field.
Q5: Can this formula be used for all types of IGBTs?
A: While the formula provides a general calculation, specific IGBT designs may have variations that require manufacturer-specific data for precise calculations.