Formula Used:
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Collector-Base Junction Capacitance in active mode is reverse biased and is the capacitance between collector and base. It's an important parameter in bipolar junction transistor (BJT) operation and high-frequency performance analysis.
The calculator uses the formula:
Where:
Explanation: This formula describes how the junction capacitance decreases with increasing reverse bias voltage due to the widening of the depletion region.
Details: Accurate calculation of collector-base junction capacitance is crucial for analyzing high-frequency performance, switching characteristics, and overall circuit behavior of bipolar junction transistors. It affects the Miller effect and frequency response of amplifiers.
Tips: Enter all values in appropriate units (capacitance in Farads, voltage in Volts). Ensure all values are positive and physically meaningful for accurate results.
Q1: What is the typical range of collector-base junction capacitance?
A: Typically ranges from femtofarads (fF) to picofarads (pF), depending on the transistor size and technology.
Q2: How does reverse bias affect junction capacitance?
A: Increasing reverse bias voltage widens the depletion region, which decreases the junction capacitance.
Q3: What is the grading coefficient (m)?
A: The grading coefficient depends on the doping profile. For abrupt junctions, m = 0.5; for linearly graded junctions, m = 0.33.
Q4: Why is built-in voltage important?
A: Built-in voltage represents the potential barrier at the junction and affects how the capacitance changes with applied voltage.
Q5: How does temperature affect junction capacitance?
A: Temperature affects the built-in voltage and carrier concentrations, which in turn affect the junction capacitance, though the effect is typically small.