Formula Used:
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The current on operation with differential input voltage calculates the total current in a MOSFET transistor operating in saturation region. This formula is essential for analyzing and designing analog circuits, particularly differential amplifiers.
The calculator uses the formula:
Where:
Explanation: This equation describes the drain current in a MOSFET when it's operating in the saturation region, which is crucial for amplifier design and analysis.
Details: Accurate current calculation is essential for designing and analyzing differential amplifiers, determining power consumption, ensuring proper biasing, and predicting circuit performance in analog integrated circuits.
Tips: Enter process transconductance parameter in Siemens, aspect ratio (W/L), voltage across diode in Volts, and threshold voltage in Volts. All values must be positive and valid for proper calculation.
Q1: What is process transconductance parameter?
A: Process transconductance parameter (k'n) is the product of electron mobility and oxide capacitance per unit area, representing the inherent transconductance capability of the MOSFET process.
Q2: Why is aspect ratio important?
A: The aspect ratio (W/L) determines the transconductance of the transistor and affects both the current handling capability and the speed of the MOSFET.
Q3: When does this formula apply?
A: This formula applies when the MOSFET is operating in the saturation region, which occurs when Vds > Vgs - Vt.
Q4: What are typical values for these parameters?
A: Typical values vary by process technology, but k'n is usually in microsiemens range, aspect ratios range from 1 to 100+, and threshold voltages are typically 0.3-1.0V for modern processes.
Q5: Can this calculator be used for PMOS transistors?
A: For PMOS transistors, the formula is similar but uses hole mobility instead of electron mobility, and the threshold voltage is negative.