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Fermi Function Calculator

Fermi Function Equation:

\[ f(E) = \frac{n_0}{N_c} \]

1/m³
1/m³

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1. What is the Fermi Function?

The Fermi function describes the probability that an electron occupies a particular energy level in a semiconductor at thermal equilibrium. It is a fundamental concept in semiconductor physics and solid-state electronics.

2. How Does the Calculator Work?

The calculator uses the Fermi function equation:

\[ f(E) = \frac{n_0}{N_c} \]

Where:

Explanation: The Fermi function represents the ratio of electron concentration in the conduction band to the effective density of states, providing insight into the occupancy probability of energy states.

3. Importance of Fermi Function Calculation

Details: Accurate calculation of the Fermi function is crucial for understanding semiconductor behavior, designing electronic devices, and analyzing carrier concentrations in semiconductor materials.

4. Using the Calculator

Tips: Enter electron concentration and effective density of state values in 1/m³ units. Both values must be positive numbers greater than zero.

5. Frequently Asked Questions (FAQ)

Q1: What does the Fermi function represent?
A: The Fermi function represents the probability that an electronic state at energy E is occupied by an electron at thermal equilibrium.

Q2: What are typical values for the Fermi function?
A: The Fermi function ranges from 0 to 1, where 0 means no occupancy and 1 means complete occupancy of the energy state.

Q3: How does temperature affect the Fermi function?
A: Temperature affects the distribution of electrons among energy states, causing the Fermi function to spread out around the Fermi energy level.

Q4: What is the relationship between Fermi function and Fermi-Dirac statistics?
A: The Fermi function is derived from Fermi-Dirac statistics, which describe the distribution of fermions (like electrons) over energy states in thermal equilibrium.

Q5: When is the simplified form f(E) = n₀/Nc applicable?
A: This simplified form is applicable for non-degenerate semiconductors where the Boltzmann approximation is valid, typically when the Fermi level is several kT away from the band edges.

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