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Instantaneous Drain Current Using Voltage Between Drain And Source Calculator

Formula Used:

\[ Drain Current = Transconductance Parameter \times (Voltage across Oxide - Threshold Voltage) \times Voltage between Gate and Source \] \[ I_d = K_n \times (V_{ox} - V_t) \times V_{gs} \]

A/V²
V
V
V

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1. What is Instantaneous Drain Current?

Instantaneous Drain Current is the current flowing through the drain terminal of a MOSFET transistor at a specific moment in time. It is a fundamental parameter in transistor operation and circuit analysis.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ I_d = K_n \times (V_{ox} - V_t) \times V_{gs} \]

Where:

Explanation: This formula calculates the drain current based on the transistor's transconductance parameter and the voltage differences across its terminals.

3. Importance of Drain Current Calculation

Details: Accurate drain current calculation is crucial for designing and analyzing MOSFET circuits, determining power consumption, and ensuring proper transistor operation in various electronic applications.

4. Using the Calculator

Tips: Enter the transconductance parameter in A/V², all voltage values in volts. Ensure all values are valid and within the operating range of the transistor.

5. Frequently Asked Questions (FAQ)

Q1: What is the transconductance parameter?
A: The transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).

Q2: What is threshold voltage?
A: Threshold voltage is the minimum gate-to-source voltage needed to create a conducting path between the source and drain terminals.

Q3: When is this formula applicable?
A: This formula is applicable for MOSFET transistors operating in the saturation region.

Q4: What are typical values for these parameters?
A: Typical values vary by transistor type and technology, with Kn ranging from μA/V² to mA/V², and voltages typically in the 0.5-5V range.

Q5: Can this calculator be used for all transistor types?
A: This calculator is specifically designed for MOSFET transistors. Different formulas apply for BJTs and other transistor types.

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