Junction Built-in Voltage Formula:
| From: | To: |
Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied. It represents the potential barrier that prevents further diffusion of majority carriers across the junction.
The calculator uses the Junction Built-in Voltage formula:
Where:
Explanation: The formula calculates the built-in potential across a p-n junction based on temperature and doping concentrations.
Details: Junction built-in voltage is crucial for understanding semiconductor device behavior, including diode characteristics, transistor operation, and the design of various electronic components in VLSI circuits.
Tips: Enter temperature in Kelvin, and concentrations in m⁻³. All values must be positive and non-zero for accurate calculation.
Q1: What factors affect junction built-in voltage?
A: Temperature and doping concentrations (both acceptor and donor) primarily affect the built-in voltage. Higher doping concentrations increase the built-in voltage.
Q2: How does temperature affect built-in voltage?
A: Built-in voltage decreases with increasing temperature due to the increase in intrinsic carrier concentration.
Q3: What are typical values of built-in voltage?
A: For silicon p-n junctions, built-in voltage typically ranges from 0.5 to 0.9 volts at room temperature.
Q4: Why is intrinsic concentration squared in the formula?
A: The square of intrinsic concentration represents the product of electron and hole concentrations in intrinsic semiconductor, which is fundamental to the mass action law.
Q5: Can this formula be used for all semiconductor materials?
A: While the basic form applies to all semiconductors, the intrinsic concentration value varies significantly between different semiconductor materials.