Formula Used:
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Junction Current is junction leakage from source/drain diffusions in semiconductor devices. It represents the leakage current that occurs through the p-n junctions in CMOS devices, contributing to static power consumption.
The calculator uses the formula:
Where:
Explanation: The formula calculates junction leakage current by subtracting the sum of subthreshold current, contention current, and gate current from the total static power divided by base collector voltage.
Details: Accurate calculation of junction current is crucial for analyzing power consumption in CMOS devices, optimizing circuit design, and minimizing leakage currents in low-power applications.
Tips: Enter all values in appropriate units (Watts for power, Volts for voltage, and Amperes for currents). All values must be positive numbers.
Q1: What causes junction leakage current?
A: Junction leakage current is caused by carrier generation and recombination in the depletion region of p-n junctions, and by tunneling effects in heavily doped junctions.
Q2: How does temperature affect junction current?
A: Junction current typically increases with temperature due to increased carrier generation and reduced barrier height in the p-n junctions.
Q3: What are typical values for junction current?
A: Junction current values are typically in the range of picoamperes to nanoamperes for modern CMOS technologies, depending on the device size and technology node.
Q4: How can junction leakage be minimized?
A: Junction leakage can be minimized through proper device design, using reverse body biasing, and implementing power gating techniques.
Q5: Is junction current significant in modern CMOS circuits?
A: While individual junction currents are small, the cumulative effect across millions of transistors can contribute significantly to total static power consumption in modern ICs.