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Output Resistance of Wilson MOS Mirror Calculator

Output Resistance Formula:

\[ R_o = (g_{m3} \times R_{f3}) \times R_{o2} \]

Siemens
Ohm
Ohm

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1. What is Output Resistance of Wilson MOS Mirror?

The Output Resistance of Wilson MOS Mirror is a key parameter that determines the accuracy and stability of current mirror circuits. It represents the resistance seen at the output terminal of the Wilson MOS mirror configuration.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ R_o = (g_{m3} \times R_{f3}) \times R_{o2} \]

Where:

Explanation: The formula calculates the overall output resistance by multiplying the transconductance of Q3 with its finite output resistance, then multiplying the result by the finite output resistance of the second resistor.

3. Importance of Output Resistance Calculation

Details: Accurate output resistance calculation is crucial for designing stable current mirrors, ensuring proper current matching, and maintaining circuit performance in analog integrated circuits.

4. Using the Calculator

Tips: Enter transconductance in Siemens, and both resistance values in Ohms. All values must be positive and non-zero for accurate calculation.

5. Frequently Asked Questions (FAQ)

Q1: Why is output resistance important in Wilson MOS mirror?
A: Higher output resistance provides better current matching and improves the accuracy of current mirror operation.

Q2: What are typical values for transconductance in MOS transistors?
A: Transconductance values typically range from 0.1 to 10 mS depending on transistor size and bias conditions.

Q3: How does finite output resistance affect circuit performance?
A: Finite output resistance can cause current errors and reduce the precision of current mirror circuits.

Q4: Are there limitations to this calculation?
A: This calculation assumes ideal transistor characteristics and may need adjustment for very high-frequency applications or extreme operating conditions.

Q5: Can this calculator be used for bipolar transistors?
A: While the concept is similar, bipolar transistors have different characteristics and would require different formulas for accurate calculation.

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