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Voltage Across Gate And Source Of Mosfet On Operation With Differential Input Voltage Calculator

Formula Used:

\[ V_{gs} = V_{th} + \sqrt{\frac{2 \times I_b}{k'_n \times \frac{W}{L}}} \]

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A
A/V²
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1. What is Gate-Source Voltage?

Gate-source voltage (Vgs) is a critical parameter in MOSFET operation that controls the conductivity of the channel between source and drain. It determines whether the MOSFET is in cutoff, linear, or saturation region of operation.

2. How Does the Calculator Work?

The calculator uses the formula:

\[ V_{gs} = V_{th} + \sqrt{\frac{2 \times I_b}{k'_n \times \frac{W}{L}}} \]

Where:

Explanation: This formula calculates the gate-source voltage required to establish a specific DC bias current in a MOSFET, considering the device's physical parameters and process characteristics.

3. Importance of Vgs Calculation

Details: Accurate Vgs calculation is crucial for MOSFET biasing, amplifier design, and ensuring proper transistor operation in various circuit configurations. It helps determine the operating point and ensures the MOSFET functions in the desired region.

4. Using the Calculator

Tips: Enter threshold voltage in volts, DC bias current in amperes, process transconductance parameter in A/V², and aspect ratio as a dimensionless value. All values must be positive and non-zero for valid results.

5. Frequently Asked Questions (FAQ)

Q1: What is the typical range for threshold voltage?
A: Threshold voltage typically ranges from 0.3V to 1.5V for modern MOSFETs, depending on the manufacturing process and device type.

Q2: How does aspect ratio affect Vgs?
A: Larger aspect ratio (W/L) decreases the required Vgs for a given bias current, as wider channels provide more current-carrying capacity.

Q3: What is the process transconductance parameter?
A: k'n is a technology-dependent parameter that represents the intrinsic transconductance of the MOSFET process, typically ranging from 50μA/V² to 500μA/V².

Q4: When is this formula most accurate?
A: This formula is most accurate for long-channel MOSFETs operating in saturation region with strong inversion.

Q5: How does temperature affect Vgs calculation?
A: Temperature affects threshold voltage (decreases with increasing temperature) and carrier mobility, which should be considered for precise calculations over temperature ranges.

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